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IRG4BC20MDPbF INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC20MDPbF Description

PD -94908A IRG4BC20MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE .

IRG4BC20MDPbF Features

* Rugged: 10µsec short circuit capable at VGS=15V

IRG4BC20MDPbF Applications

* IGBT Co-packaged with ultra-soft-recovery antiparallel diode
* Industry standard TO-220AB package
* Lead-Free G C Fast IGBT VCES = 600V VCE(on) typ. = 1.85V Benefits
* Offers highest efficiency and short circuit capability for intermediate applications

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG4BC20MDPbF-like datasheet