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FSL130D - N-Channel Power MOSFET

FSL130D Description

FSL130D, FSL130R June 1998 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs .
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and.

FSL130D Features

* 8A, 100V, rDS(ON) = 0.230Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Rat

FSL130D Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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Datasheet Details

Part number
FSL130D
Manufacturer
Intersil Corporation
File Size
45.98 KB
Datasheet
FSL130D_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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