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FSL13A0D - N-Channel Power MOSFET

FSL13A0D Description

FSL13A0D, FSL13A0R Data Sheet June 1999 File Number 4480.2 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Produc.

FSL13A0D Features

* 9A, 100V, rDS(ON) = 0.180Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Rat

FSL13A0D Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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Datasheet Details

Part number
FSL13A0D
Manufacturer
Intersil Corporation
File Size
71.79 KB
Datasheet
FSL13A0D_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Intersil Corporation
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