Part number:
HGTG10N120BN
Manufacturer:
Intersil Corporation
File Size:
81.67 KB
Description:
N-channel igbt.
HGTG10N120BN_IntersilCorporation.pdf
Datasheet Details
HGTG10N120BN Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A
HGTG10N120BN_IntersilCorporation.pdf
Datasheet Details
HGTG10N120BN
Intersil Corporation
81.67 KB
N-channel igbt.
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