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HGTG10N120BN Datasheet - Intersil Corporation

HGTG10N120BN N-Channel IGBT

HGTG10N120BN Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A

HGTG10N120BN Datasheet (81.67 KB)

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Datasheet Details

Part number:

HGTG10N120BN

Manufacturer:

Intersil Corporation

File Size:

81.67 KB

Description:

N-channel igbt.

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HGTG10N120BN N-Channel IGBT Intersil Corporation

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