* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: A
HGTG10N120BN Datasheet (81.67 KB)
HGTG10N120BN
Intersil Corporation
81.67 KB
N-channel igbt.
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Data Sheet January 2000 File Number 4575.2
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N.
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