* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appli
HGTG10N120BND Datasheet (82.69 KB)
HGTG10N120BND
Intersil Corporation
82.69 KB
N-channel igbt.
HGTG10N120BND
Data Sheet January 2000 File Number 4579.3
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG10N120BND i.
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