Part number:
HGTG10N120BND
Manufacturer:
Intersil Corporation
File Size:
82.69 KB
Description:
N-channel igbt.
HGTG10N120BND_IntersilCorporation.pdf
Datasheet Details
HGTG10N120BND Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appli
HGTG10N120BND_IntersilCorporation.pdf
Datasheet Details
HGTG10N120BND
Intersil Corporation
82.69 KB
N-channel igbt.
HGTG10N120BND Distributor
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