HGTG10N120BND Datasheet, Igbt, Intersil Corporation

HGTG10N120BND Features

• Igbt of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development ty

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Part number:

HGTG10N120BND

Manufacturer:

Intersil Corporation

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82.69kb

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📄 Datasheet

Description:

N-channel igbt.

HGTG10N120BND Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGTG10N120BND

Intersil Corporation

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