HGTG7N60A4D Datasheet, Igbt, Intersil Corporation

HGTG7N60A4D Features

• Igbt of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage

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Part number:

HGTG7N60A4D

Manufacturer:

Intersil Corporation

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134.44kb

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📄 Datasheet

Description:

N-channel igbt.

HGTG7N60A4D Application

• Applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode

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HGTG7N60A4D

Intersil Corporation

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