* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used
HGTG7N60A4D Datasheet (134.44 KB)
HGTG7N60A4D
Intersil Corporation
134.44 KB
N-channel igbt.
TM
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
Data Sheet March 2000 File Number 4827.1
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Di.
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