* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49335. The diode used
HGTP12N60A4D Datasheet (394.54 KB)
HGTP12N60A4D
Intersil Corporation
394.54 KB
N-channel igbt.
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet November 1999 File Number 4697.3 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast .
📁 Related Datasheet
HGTP12N60A4 N-Channel IGBT (Fairchild Semiconductor)
HGTP12N60A4 N-Channel IGBT (Intersil Corporation)
HGTP12N60A4D N-Channel IGBT (Fairchild Semiconductor)
HGTP12N60A4D N-Channel IGBT (ON Semiconductor)
HGTP12N60B3 N-Channel IGBT (Intersil Corporation)
HGTP12N60B3D N-Channel IGBT (Fairchild Semiconductor)
HGTP12N60B3D N-Channel IGBT (Intersil Corporation)
HGTP12N60C3 N-Channel IGBT (Fairchild Semiconductor)
HGTP12N60C3 N-Channel IGBT (Intersil Corporation)
HGTP12N60C3D N-Channel IGBT (Fairchild Semiconductor)
