Part number:
HGTP12N60A4D
Manufacturer:
Intersil Corporation
File Size:
394.54 KB
Description:
N-channel igbt.
HGTP12N60A4D Datasheet (394.54 KB)
Datasheet Details
HGTP12N60A4D Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49335. The diode used
HGTP12N60A4D Datasheet (394.54 KB)
Datasheet Details
HGTP12N60A4D
Intersil Corporation
394.54 KB
N-channel igbt.
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