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IRF422

N-Channel Power MOSFET

IRF422 Features

* 2.2A and 2.5A, 450V and 500V

* rDS(ON) = 3.0Ω and 4.0Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “G

IRF422 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF422 Datasheet (69.48 KB)

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Datasheet Details

Part number:

IRF422

Manufacturer:

Intersil Corporation

File Size:

69.48 KB

Description:

N-channel power mosfet.

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TAGS

IRF422 N-Channel Power MOSFET Intersil Corporation

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