IRF423 N-Channel Power MOSFET

Intersil Corporation

Description

Semiconductor IRF420, IRF421, IRF422, IRF423 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

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Datasheet Specifications

Part number: IRF423
Manufacturer: Intersil Corporation
File Size: 69.48 KB
Datasheet: IRF423_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 2.2A and 2.5A, 450V and 500V
* rDS(ON) = 3.0Ω and 4.0Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “G

Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. July 1998 Fe

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IRF423 N-Channel Power MOSFET Intersil Corporation

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