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IRF423

N-Channel Power MOSFET

IRF423 Features

* 2.2A and 2.5A, 450V and 500V

* rDS(ON) = 3.0Ω and 4.0Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “G

IRF423 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.

IRF423 Datasheet (69.48 KB)

Preview of IRF423 PDF

Datasheet Details

Part number:

IRF423

Manufacturer:

Intersil Corporation

File Size:

69.48 KB

Description:

N-channel power mosfet.

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TAGS

IRF423 N-Channel Power MOSFET Intersil Corporation

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