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JANSR2N7397 4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET

JANSR2N7397 Description

JANSR2N7397 Formerly FSL234R4 June 1998 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET .
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and.

JANSR2N7397 Features

* 4A, 250V, rDS(ON) = 0.610Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
* Dose Rat

JANSR2N7397 Applications

* Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applica

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Datasheet Details

Part number
JANSR2N7397
Manufacturer
Intersil Corporation
File Size
44.99 KB
Datasheet
JANSR2N7397_IntersilCorporation.pdf
Description
4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET

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250V 0.610 Ohm Rad Hard N-Channel Power MOSFET Intersil Corporation
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