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KHB1D0N60I

N-Channel MOSFET

KHB1D0N60I Features

* VDSS= 600V, ID= 1.0A Drain-Source ON Resistance : RDS(ON)=12 @VGS = 10V Qg(typ.) = 5.9nC K Q E H P F F L M O DIM MILLIMETERS _ 0.2 6.6 + A _ 0.2 6.1 + B _ 0.3 5.34 + C _ 0.2 0.7 + D _ 0.2 2.7 + E _ 0.2 2.3 + F 0.96 MAX H _ 0.1 2.3 + I _ 0.1 0.5 + J 1.5 K _ 0.1 0.5 + L _ 0.1 M 0.8 + O 0.55 MIN _ 0.

KHB1D0N60I General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. KHB1D0N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR www.DataS.

KHB1D0N60I Datasheet (86.47 KB)

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Datasheet Details

Part number:

KHB1D0N60I

Manufacturer:

KEC

File Size:

86.47 KB

Description:

N-channel mosfet.

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KHB1D0N60I N-Channel MOSFET KEC

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