SI4435DY
Features
- VDS=-30V
- RDS(on)=0.02Ω@VGS=-10V
- RDS(on)=0.035Ω@VGS=-4.5V
P-Channel MOSFET SI4435DY (KI4435DY)
SOP-8
MOSFET
1.50 0.15
+0.040.21 -0.02
- Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range
Symbol VDS VGS ID IDM PD Rth JA
TJ, Tstg
S1 S2 S3 G4
Top View
Rating -30 ±20 -8.8 -50 2.5 50
-55 to 150
Unit V V A A W
℃/W ℃
8D 7D 6D 5D
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SSMMDD TTyyppee
SI4435DY (KI4435DY)
- Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Drain- Source Breakdown Voltage
BVDSS VGS = 0 V, ID =
- 250 μA
Zero Gate Voltage Drain Current
IDSS
VDS = -30V , VGS = 0V VDS = -15V , VGS = 0V , TJ =70℃
Gate Threshold Voltage
VGS(th) VDS = VGS , ID = -250u A
Gate-Body Leakage
IGSS VDS = 0V , VGS =...
