RDS(on)=0.035Ω@VGS=-4.5V
P-Channel MOSFET SI4435DY (KI4435DY)
SOP-8
MOSFET
1.50 0.15
+0.040.21 -0.02
S
G
D.
Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range
Symbol VDS VGS ID IDM PD RthJA
TJ, Tstg
S1 S2 S3 G4
Top View
Rating -30 ±20 -8.8 -50 2.5 5.
Full PDF Text Transcription for SI4435DY (Reference)
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SI4435DY. For precise diagrams, and layout, please refer to the original PDF.
SSMMDD TTyyppee ■ Features ● VDS=-30V ● RDS(on)=0.02Ω@VGS=-10V ● RDS(on)=0.035Ω@VGS=-4.5V P-Channel MOSFET SI4435DY (KI4435DY) SOP-8 MOSFET 1.50 0.15 +0.040.21 -0.02 S G ...
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MOSFET SI4435DY (KI4435DY) SOP-8 MOSFET 1.50 0.15 +0.040.21 -0.02 S G D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ, Tstg S1 S2 S3 G4 Top View Rating -30 ±20 -8.8 -50 2.5 50 -55 to 150 Unit V V A A W ℃/W ℃ 8D 7D 6D 5D www.kexin.com.