LSIC1MO120E0080 Datasheet (Littelfuse)

LSIC1MO120E0080, N-Channel SiC MOSFET

of the resonance method for measuring RG, refer to the JEDEC Standard JESD24-11 test method Max - 100 - 100 100 100 4.0 - - Unit V µA nA V 3 Specifications are subject to change without notice.

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LSIC1MO120E0080 Features

* Optimized for high-frequency, high-efficiency applications

* Extremely low gate charge and output capacitance

* Low gate resistance for high-frequency switching

* Normally-off operations at all temperatures Applications

* High-frequency applications