LSIC1MO120E0080 Datasheet - Littelfuse

LSIC1MO120E0080 N-Channel SiC MOSFET

of the resonance method for measuring RG, refer to the JEDEC Standard JESD24-11 test method Max - 100 - 100 100 100 4.0 - - Unit V µA nA V 3 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2022 Littelfuse, Inc.

LSIC1MO120E0080 Features

* Optimized for high-frequency, high-efficiency applications

* Extremely low gate charge and output capacitance

* Low gate resistance for high-frequency switching

* Normally-off operations at all temperatures Applications

* High-frequency applications

LSIC1MO120E0080-Littelfuse.pdf