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LSIC1MO120E0080 N-Channel SiC MOSFET

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Description

LSIC1MO120E0080 1200 V, 80 mOhm N-Channel SiC MOSFET Silicon Carbide MOSFET Datasheet Agency Approvals and Environmental Environmental Approvals Pin.
of the resonance method for measuring RG, refer to the JEDEC Standard JESD24-11 test method Max - 100 - 100 100 100 4.

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Applications

* Extremely low gate charge and output capacitance
* Low gate resistance for high-frequency switching
* Normally-off operations at all temperatures Applications
* High-frequency applications
* Solar Inverters
* Switch Mode Power Supplies
* UPS

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