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LSIC1MO120G0025 N-Channel SiC MOSFET

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Description

LSIC1MO120G0025 LSIC1MO120G0025 1200 V, 25 mOhm N-Channel SiC MOSFET Silicon Carbide MOSFET Datasheet Agency Approvals and Environmental Environment.
of the resonance method for measuring RG, refer to the JEDEC Standard JESD24-11 test method Max - 100 - 100 100 32 4 - - Unit V µA nA V 3 Specific.

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Applications

* Extremely low gate charge and output capacitance
* Low gate resistance for high-frequency switching
* Normally-off operations at all temperatures
* Ultra-low on-resistance
* Optimized package with separate driver source pin
* RoHS compliant, lead-fre

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