LSIC1MO170E0750 Datasheet - Littelfuse

LSIC1MO170E0750 N-Channel SiC MOSFET

of the resonance method for measuring RG, refer to the JEDEC Standard JESD24-11 test method Max 10 - 100 100 1000 4.0 - - Unit V µA nA V 3 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 20.

LSIC1MO170E0750 Features

* Optimized for high-frequency, high-efficiency applications

* Extremely low gate charge and output capacitance

* Low gate resistance for high-frequency switching

* Normally-off operations at all temperatures Ultra-low on-resistance Applications

* High-freque

LSIC1MO170E0750-Littelfuse.pdf