* Optimized for highfrequency, high-efficiency applications
* Extremely low gate charge and output capacitance
* Low gate resistance for high-frequency switching
* Normally-off operation at all temperatures
* Ultra-low on-resistance
* Halogen-fr
LSIC1MO120E0160 Datasheet (927.32 KB)
LSIC1MO120E0160
927.32 KB
Sic mosfet.
SiC MOSFET
LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L
LSIC1MO120E0160 1200 V N-channel, Enhancement-mode SiC MOSFET
RoHS Pb
Product Summary
Charac.
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