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LSIC1MO120G0120 N-Channel SiC MOSFET

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Description

LSIC1MO120G0120 LSIC1MO120G0120 1200 V, 120 mOhm N-Channel SiC MOSFET Silicon Carbide MOSFET Datasheet Agency Approvals and Environmental Environmen.
of the resonance method for measuring RG, refer to the JEDEC Standard JESD24-11 test method Max - 100 - 100 100 150 4.

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Applications

* Extremely low gate charge and output capacitance
* Low gate resistance for high-frequency switching
* Normally-off operations at all temperatures
* Ultra-low on-resistance
* Optimized package with separate driver source pin Applications
* High-frequ

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