* Optimized for highfrequency, high-efficiency applications
* Extremely low gate charge and output capacitance
* Low gate resistance for high-frequency switching
* Normally-off operation at all temperatures
* Ultra-low on-resistance Applications
LSIC1MO170E1000 Datasheet (1.01 MB)
LSIC1MO170E1000
1.01 MB
Enhancement-mode sic mosfet.
SiCSMiCOMSOFESTFEDTiode
LSIC1MO170E1000, 1700 V, 1000 mOhm, TO-247-3L
LSIC1MO170E1000 1700 V N-channel, Enhancement-mode SiC MOSFET
RoHS Pb
Product .
📁 Related Datasheet
LSIC1MO170E0750 N-Channel SiC MOSFET (Littelfuse)
LSIC1MO120E0080 N-Channel SiC MOSFET (Littelfuse)
LSIC1MO120E0120 N-Channel SiC MOSFET (Littelfuse)
LSIC1MO120E0160 SiC MOSFET (Littelfuse)
LSIC1MO120G0025 N-Channel SiC MOSFET (Littelfuse)
LSIC1MO120G0120 N-Channel SiC MOSFET (Littelfuse)
LSIC2SD065A08A GEN2 SiC Schottky Diode (Littelfuse)
LSIC2SD065A10A 10A SiC Schottky Barrier Diode (Littelfuse)
LSIC2SD065C08A GEN2 SiC Schottky Diode (Littelfuse)
LSIC2SD065C10A 10A SiC Schottky Barrier Diode (Littelfuse)
