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LSIC1MO170E1000 Enhancement-mode SiC MOSFET

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Description

SiCSMiCOMSOFESTFEDTiode LSIC1MO170E1000, 1700 V, 1000 mOhm, TO-247-3L LSIC1MO170E1000 1700 V N-channel, Enhancement-mode SiC MOSFET RoHS Pb Product .

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Applications

* Extremely low gate charge and output capacitance
* Low gate resistance for high-frequency switching
* Normally-off operation at all temperatures
* Ultra-low on-resistance Applications
* High-frequency applications
* Solar Inverters

LSIC1MO170E1000 Distributors

📁 Related Datasheet

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