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MT83P06N3 P-Channel MOSFET

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Description

 MT83P06N3  3&KDQQHO(QKDQFHPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary  ‡ VDS= -30V ‡ ID= -40A ‡ RDS(ON) 1.

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Datasheet Specifications

Part number
MT83P06N3
Manufacturer
MT Semiconductor
File Size
281.35 KB
Datasheet
MT83P06N3-MTSemiconductor.pdf
Description
P-Channel MOSFET

Features

* ‡ Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low ‡ On-Resistance. ‡ Lead free product is acquired. ‡ RoHS Compliant. $SSOLFDWLRQV ‡ Notebook Computer ‡Portable Battery Pack Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol Parameter 10s VDS Drain

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