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MDS9651 Complementary N-P Channel Trench MOSFET

MDS9651 Description

MDS9651 * Complementary N-P Channel Trench MOSFET MDS9651 Complementary N-P Channel Trench MOSFET General .
The MDS9651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Feat.

MDS9651 Features

* N-Channel VDS = 30V ID = 6.9A @ VGS = 10V RDS(ON)

MDS9651 Applications

* Inverters General purpose applications 5(D2) 6(D2) 7(D1) 8(D1) D1 D2 4(G2) 3(S2) 2(G1) 1(S1) G1 G2 S1 S2 Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation(1) Sin

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Datasheet Details

Part number
MDS9651
Manufacturer
MagnaChip
File Size
1.20 MB
Datasheet
MDS9651-MagnaChip.pdf
Description
Complementary N-P Channel Trench MOSFET

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Complementary N-P Channel Trench MOSFET MagnaChip
MagnaChip MDS9651-like datasheet