MDS9651 Complementary N-P Channel Trench MOSFET

MagnaChip

Description

MDS9651 * Complementary N-P Channel Trench MOSFET MDS9651 Complementary N-P Channel Trench MOSFET General .
The MDS9651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Feat.

📥 Download Datasheet

MDS9651 Datasheet Preview — Preview of MDS9651 PDF

Datasheet Specifications

Part number: MDS9651
Manufacturer: MagnaChip
File Size: 1.20 MB
Datasheet: MDS9651-MagnaChip.pdf
Description: Complementary N-P Channel Trench MOSFET

Features

* N-Channel VDS = 30V ID = 6.9A @ VGS = 10V RDS(ON)

Applications

* Inverters General purpose applications 5(D2) 6(D2) 7(D1) 8(D1) D1 D2 4(G2) 3(S2) 2(G1) 1(S1) G1 G2 S1 S2 Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation(1) Sin

MDS9651 Distributors

📁 Related Datasheet

MDS-148 MDS-149 MDS-158 MDS-169 MDS-189 MDS-200A

📌 All Tags

MDS9651 Complementary N-P Channel Trench MOSFET MagnaChip

MagnaChip MDS9651-like datasheet