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MDS9652E N-P Channel Trench MOSFET

MDS9652E Description

MDS9652E * Complementary N-P Channel Trench MOSFET MDS9652E Complementary N-P Channel Trench MOSFET General .
The MDS9652E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Fea.

MDS9652E Features

* N-Channel  VDS = 30V  ID = 7.2A @ VGS = 10V  RDS(ON)

MDS9652E Applications

*  Inverters  General purpose applications 5(D2) 6(D2) 7(D1) 8(D1) D1 D2 4(G2) 3(S2) 2(G1) 1(S1) G1 G2 S1 S2 Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation(1)

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Datasheet Details

Part number
MDS9652E
Manufacturer
MagnaChip
File Size
1.46 MB
Datasheet
MDS9652E-MagnaChip.pdf
Description
N-P Channel Trench MOSFET

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N-P Channel Trench MOSFET MagnaChip
MagnaChip MDS9652E-like datasheet