Datasheet Specifications
- Part number
- MDS9652E
- Manufacturer
- MagnaChip
- File Size
- 1.46 MB
- Datasheet
- MDS9652E-MagnaChip.pdf
- Description
- N-P Channel Trench MOSFET
Description
MDS9652E * Complementary N-P Channel Trench MOSFET MDS9652E Complementary N-P Channel Trench MOSFET General .Features
* N-Channel VDS = 30V ID = 7.2A @ VGS = 10V RDS(ON)Applications
* Inverters General purpose applications 5(D2) 6(D2) 7(D1) 8(D1) D1 D2 4(G2) 3(S2) 2(G1) 1(S1) G1 G2 S1 S2 Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation(1)MDS9652E Distributors
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