SLD740UZ - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

Part number	SLD740UZ
Manufacturer	Maple Semiconductor
File Size	363.67 KB
Description	N-Channel MOSFET
Datasheet	SLD740UZ-MapleSemiconductor.pdf

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 11A, 430V, RDS(on)typ. = 0.53Ω@VGS = 10 V - Low gate charge ( typical 15.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLD740UZ / SLU740UZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL VESD(G-S) Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Puls.

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Published: Apr 11, 2017 |