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SLP40N26C

260V N-Channel MOSFET

SLP40N26C Features

* - 40A, 260V, RDS(on) typ. = 0.12Ω@VGS = 10 V - Low gate charge ( typical 55 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP40N26C SLF40N26C VDSS ID IDM VGSS EAS IAR EAR dv/d

SLP40N26C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP40N26C Datasheet (377.35 KB)

Preview of SLP40N26C PDF

Datasheet Details

Part number:

SLP40N26C

Manufacturer:

Maple Semiconductor

File Size:

377.35 KB

Description:

260v n-channel mosfet.

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TAGS

SLP40N26C 260V N-Channel MOSFET Maple Semiconductor

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