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SLP4N65C Datasheet - Maple Semiconductor

SLP4N65C N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP4N65C Features

* - 4A, 650V, RDS(on)typ. = 2.32Ω@VGS = 10 V - Low gate charge ( typical 13nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N65C SLF4N65C VDS

SLP4N65C-MapleSemiconductor.pdf