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SLP4N65C

N-Channel MOSFET

SLP4N65C Features

* - 4A, 650V, RDS(on)typ. = 2.32Ω@VGS = 10 V - Low gate charge ( typical 13nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N65C SLF4N65C VDS

SLP4N65C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP4N65C Datasheet (303.25 KB)

Preview of SLP4N65C PDF

Datasheet Details

Part number:

SLP4N65C

Manufacturer:

Maple Semiconductor

File Size:

303.25 KB

Description:

N-channel mosfet.

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TAGS

SLP4N65C N-Channel MOSFET Maple Semiconductor

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