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SLP4N60C

N-Channel MOSFET

SLP4N60C Features

* - 4.5A, 600V, RDS(on)typ. = 2Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N60C SLF4N60C VDSS

SLP4N60C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP4N60C Datasheet (299.91 KB)

Preview of SLP4N60C PDF

Datasheet Details

Part number:

SLP4N60C

Manufacturer:

Maple Semiconductor

File Size:

299.91 KB

Description:

N-channel mosfet.

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TAGS

SLP4N60C N-Channel MOSFET Maple Semiconductor

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