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SLP4N65S Datasheet - Maple Semiconductor

N-Channel MOSFET

SLP4N65S Features

* - 4.0A, 650V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N65S SLF4N65S VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

SLP4N65S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP4N65S Datasheet (574.92 KB)

Preview of SLP4N65S PDF

Datasheet Details

Part number:

SLP4N65S

Manufacturer:

Maple Semiconductor

File Size:

574.92 KB

Description:

N-channel mosfet.

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SLP4N65S N-Channel MOSFET Maple Semiconductor

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