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SLP4N65UZ

N-Channel MOSFET

SLP4N65UZ Features

* - 4A, 650V, RDS(on)typ = 2.32Ω@VGS = 10 V - Low gate charge ( typical 10.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol VDSS ID IDM VGSS EAS IAR EAR dv/d

SLP4N65UZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP4N65UZ Datasheet (1.76 MB)

Preview of SLP4N65UZ PDF

Datasheet Details

Part number:

SLP4N65UZ

Manufacturer:

Maple Semiconductor

File Size:

1.76 MB

Description:

N-channel mosfet.

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TAGS

SLP4N65UZ N-Channel MOSFET Maple Semiconductor

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