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SLP4N70C

700V N-Channel MOSFET

SLP4N70C Features

* - 3.5A, 700V, RDS(on)typ. = 3.0Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N70C SLF4N70C VD

SLP4N70C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP4N70C Datasheet (1.16 MB)

Preview of SLP4N70C PDF

Datasheet Details

Part number:

SLP4N70C

Manufacturer:

Maple Semiconductor

File Size:

1.16 MB

Description:

700v n-channel mosfet.

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TAGS

SLP4N70C 700V N-Channel MOSFET Maple Semiconductor

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