SLP4N60S Datasheet - Maple Semiconductor

SLP4N60S N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP4N60S Features

* - 4.0A, 600V, RDS(on)Typ= 2.0Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N60S SLF4N60S VDSS ID IDM VGSS EAS IAR EAR dv/dt P

SLP4N60S-MapleSemiconductor.pdf