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SLP4N60S

N-Channel MOSFET

SLP4N60S Features

* - 4.0A, 600V, RDS(on)Typ= 2.0Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N60S SLF4N60S VDSS ID IDM VGSS EAS IAR EAR dv/dt P

SLP4N60S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP4N60S Datasheet (574.64 KB)

Preview of SLP4N60S PDF

Datasheet Details

Part number:

SLP4N60S

Manufacturer:

Maple Semiconductor

File Size:

574.64 KB

Description:

N-channel mosfet.

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SLP4N60S N-Channel MOSFET Maple Semiconductor

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