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SLP4N60S N-Channel MOSFET

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Description

SLP4N60S/SLF4N60S SLP4N60S/SLF4N60S 600V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

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Datasheet Specifications

Part number
SLP4N60S
Manufacturer
Maple Semiconductor
File Size
574.64 KB
Datasheet
SLP4N60S-MapleSemiconductor.pdf
Description
N-Channel MOSFET

Features

* - 4.0A, 600V, RDS(on)Typ= 2.0Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N60S SLF4N60S VDSS ID IDM VGSS EAS IAR EAR dv/dt P

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