SLP50R140SJ Datasheet - Maple Semiconductor

N-Channel MOSFET

SLP50R140SJ Features

* -25A, 500V, RDS(on) typ.= 0.12Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 70nC) D GDS TO-220F GDS TO-220 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter TO-220 TO-220F V

SLP50R140SJ General Description

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh *nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching perfo.

SLP50R140SJ Datasheet (791.06 KB)

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SLP50R140SJ

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Maple Semiconductor

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791.06 KB

Description:

N-channel mosfet.

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SLP50R140SJ N-Channel MOSFET Maple Semiconductor

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SLP50R140SJ Features

SLP50R140SJ General Description

Datasheet Details

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