SLP50R240SJ Datasheet - Maple Semiconductor

N-Channel MOSFET

SLP50R240SJ Features

* -18A, 500V, RDS(on) typ.= 0.21Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 43nC) D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source

SLP50R240SJ General Description

This Power MOSFET is producFeeadtuurseisng Maplesemi‘s Advanced Super-Junction This advanced technology theacsh *nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching perfor.

SLP50R240SJ Datasheet (885.98 KB)

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SLP50R240SJ

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Maple Semiconductor

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885.98 KB

Description:

N-channel mosfet.

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SLP50R240SJ N-Channel MOSFET Maple Semiconductor

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SLP50R240SJ Features

SLP50R240SJ General Description

Datasheet Details

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