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SLP5N60C Datasheet - Maple Semiconductor

N-Channel MOSFET

SLP5N60C Features

* - 4.5A, 600V, RDS(on)typ. = 2.0Ω@VGS = 10 V - Low gate charge ( typical 13.2nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP5N60C SLF5N60C

SLP5N60C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP5N60C Datasheet (1.18 MB)

Preview of SLP5N60C PDF

Datasheet Details

Part number:

SLP5N60C

Manufacturer:

Maple Semiconductor

File Size:

1.18 MB

Description:

N-channel mosfet.

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SLP5N60C N-Channel MOSFET Maple Semiconductor

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