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SLP5N50S Datasheet - Maple Semiconductor

N-Channel MOSFET

SLP5N50S Features

* - 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D TO-220F TO-220 G GD S GDS S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLF5N50S SLP5N50S VDS

SLP5N50S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP5N50S Datasheet (1.03 MB)

Preview of SLP5N50S PDF

Datasheet Details

Part number:

SLP5N50S

Manufacturer:

Maple Semiconductor

File Size:

1.03 MB

Description:

N-channel mosfet.

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SLP5N50S N-Channel MOSFET Maple Semiconductor

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