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SLP5N65C Datasheet - Maple Semiconductor

N-Channel MOSFET

SLP5N65C Features

* - 4.5A, 650V, RDS(on)typ. = 2.5Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

SLP5N65C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP5N65C Datasheet (1.00 MB)

Preview of SLP5N65C PDF

Datasheet Details

Part number:

SLP5N65C

Manufacturer:

Maple Semiconductor

File Size:

1.00 MB

Description:

N-channel mosfet.

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SLP5N65C N-Channel MOSFET Maple Semiconductor

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