SLP5N65S Datasheet - Maple Semiconductor

N-Channel MOSFET

SLP5N65S Features

* - 4.5A, 650V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D TO-220F TO-220 G GD S GDS S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP5N65S SLF5N65S VD

SLP5N65S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLP5N65S Datasheet (537.92 KB)

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Datasheet Details

Part number:

SLP5N65S

Manufacturer:

Maple Semiconductor

File Size:

537.92 KB

Description:

N-channel mosfet.

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SLP5N65S N-Channel MOSFET Maple Semiconductor

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SLP5N65S Features

SLP5N65S General Description

Datasheet Details

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Description:

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