Description
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Junction This advanced technology
theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy.i=cat0al .5i2lΩo5@nrCeV)dGS
=
10
V
to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching
performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the
avalanche and commutation m-oImdpero.ved dv/dt capability
These devices are well suited for AC/DC power conversion
SLD50R290S
Features
- -14A, 500V, RDS(on) typ. = 0.27Ω@VGS = 10 V
- Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
38nC)
DD
GDS
TO-220
GDS
TO-220F
GDS
DD
D2-PAK GS
GS
D-PAK
GDS
I2-PAK
I-PAK
G S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
D2-PAK/D-PAK I2-PAK /.
