SLP4N65UZ - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 4A, 650V, RDS(on)typ = 2.32Ω@VGS = 10 V - Low gate charge ( typical 10.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Volta.

📁 SLP4N65UZ Similar Datasheet

SLP4R-2 - (SLPxxR/S-2) Flex Printed Circuit (Framatome Connectors International)
SLP4S-2 - (SLPxxR/S-2) Flex Printed Circuit (Framatome Connectors International)
SLP-100 - Low Pass Filter (Mini-Circuits)
SLP-100+ - Low Pass Filter (Mini-Circuits)
SLP-1xxx-51 - LED lamp (Sanyo)
SLP-2xxx-51 - LED lamp (Sanyo)
SLP-3117E-51 - 3.1mm yellow-green contact type LED lamp (U-cut version) (Sanyo Semicon Device)
SLP-3130C-81 - 5mm yelloe-green contact type LED lamp (Sanyo Semicon Device)

Other Datasheets by Maple Semiconductor

Published: Apr 11, 2017 |