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ME2306D-G, ME2306D N-Channel 30V (D-S) MOSFET

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Description

ME2306D/ME2306D-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL .
The ME2306D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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This datasheet PDF includes multiple part numbers: ME2306D-G, ME2306D. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
ME2306D-G, ME2306D
Manufacturer
Matsuki
File Size
1.23 MB
Datasheet
ME2306D-Matsuki.pdf
Description
N-Channel 30V (D-S) MOSFET
Note
This datasheet PDF includes multiple part numbers: ME2306D-G, ME2306D.
Please refer to the document for exact specifications by model.

Features

* RDS(ON)≦31mΩ@VGS=10V
* RDS(ON)≦52mΩ@VGS=4.5V
* ESD Protected
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* Portable Equipment
* Load Switch e Ordering Information: ME2306D(Pb-free) ME2306D-G (Green product-Halogen free)

ME2306D-G Distributors

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