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ME2306D-G - N-Channel 30V (D-S) MOSFET

Product Overview

Matsuki

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ME2306D-G N-Channel 30V (D-S) MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME2306D-G

Datasheet Details

Part number	ME2306D-G
Manufacturer	Matsuki
File Size	1.23 MB
Description	N-Channel 30V (D-S) MOSFET
Datasheet	ME2306D-G Datasheet
Note	This datasheet PDF includes multiple part numbers: ME2306D-G, ME2306D. Please refer to the document for exact specifications by model.
Additional preview pages of the ME2306D-G datasheet.

Product details

Description

The ME2306D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

Features

RDS(ON)≦31mΩ@VGS=10V.
RDS(ON)≦52mΩ@VGS=4.5V.
ESD Protected.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 20, 2018 |