Datasheet Details
Part number:
ME2306DS-G, ME2306DS
Manufacturer:
Matsuki
File Size:
1.03 MB
Description:
N-channel 30v (d-s) mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME2306DS-G, ME2306DS.
Please refer to the document for exact specifications by model.
ME2306DS-G, ME2306DS, N-Channel 30V (D-S) MOSFET
The ME2306DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such
ME2306DS-G Features
* RDS(ON)≦31mΩ@VGS=10V
* RDS(ON)≦52mΩ@VGS=4.5V
* ESD Protected
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Load Switch Ord
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