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ME2306DS-G, ME2306DS N-Channel 30V (D-S) MOSFET

ME2306DS-G Description

ME2306DS/ME2306DS-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL .
The ME2306DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

ME2306DS-G Features

* RDS(ON)≦31mΩ@VGS=10V
* RDS(ON)≦52mΩ@VGS=4.5V
* ESD Protected
* Super high density cell design for extremely low RDS(ON)

ME2306DS-G Applications

* Power Management in Note book
* Portable Equipment
* Load Switch Ordering Information: ME2306DS(Pb-free) ME2306DS-G (Green product-Halogen fr

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME2306DS-G, ME2306DS. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME2306DS-G, ME2306DS
Manufacturer
Matsuki
File Size
1.03 MB
Datasheet
ME2306DS-Matsuki.pdf
Description
N-Channel 30V (D-S) MOSFET
Note
This datasheet PDF includes multiple part numbers: ME2306DS-G, ME2306DS.
Please refer to the document for exact specifications by model.

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📌 All Tags

N-Channel 30V D-S MOSFET Matsuki
Matsuki ME2306DS-G-like datasheet