ME2306DS Datasheet (Matsuki) - N-Channel 30V (D-S) MOSFET

ME2306DS, N-Channel 30V (D-S) MOSFET

The ME2306DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

ME2306DS Features

* RDS(ON)≦31mΩ@VGS=10V

* RDS(ON)≦52mΩ@VGS=4.5V

* ESD Protected

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Load Switch Ord