Datasheet4U Logo Datasheet4U.com

ME2306DS - N-Channel 30V (D-S) MOSFET

ME2306DS Description

ME2306DS/ME2306DS-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL .
The ME2306DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

ME2306DS Features

* RDS(ON)≦31mΩ@VGS=10V
* RDS(ON)≦52mΩ@VGS=4.5V
* ESD Protected
* Super high density cell design for extremely low RDS(ON)

ME2306DS Applications

* Power Management in Note book
* Portable Equipment
* Load Switch Ordering Information: ME2306DS(Pb-free) ME2306DS-G (Green product-Halogen fr

📥 Download Datasheet

Preview of ME2306DS PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
ME2306DS
Manufacturer
Matsuki
File Size
1.03 MB
Datasheet
ME2306DS-Matsuki.pdf
Description
N-Channel 30V (D-S) MOSFET

📁 Related Datasheet

  • ME2301D - P-Channel MOSFET (VBsemi)
  • ME2303 - P-Channel MOSFET (VBsemi)
  • ME2323D - P-Channel MOSFET (VBsemi)
  • ME2324D - N-Channel MOSFET (VBsemi)
  • ME2325 - P-Channel 30V MOSFET (VBsemi)
  • ME2345A - P-Channel MOSFET (VBsemi)
  • ME2-CH2O-16x15 - Electrochemical Formaldehyde Sensor (Winsen)
  • ME2-CH2O-D16 - Electrochemical Formaldehyde Sensor (Winsen)

📌 All Tags

N-Channel 30V D-S MOSFET Matsuki
Matsuki ME2306DS-like datasheet