Datasheet4U Logo Datasheet4U.com

ME2306S-G

N-Channel 30V (D-S) MOSFET

ME2306S-G Features

* FEATURES

* RDS(ON)≦37mΩ@ VGS =10V

* RDS(ON)≦49mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Displa

ME2306S-G General Description

The ME2306S is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular ph.

ME2306S-G Datasheet (1.14 MB)

Preview of ME2306S-G PDF

Datasheet Details

Part number:

ME2306S-G

Manufacturer:

Matsuki

File Size:

1.14 MB

Description:

N-channel 30v (d-s) mosfet.

📁 Related Datasheet

ME2306S N-Channel 30V (D-S) MOSFET (Matsuki)

ME2306 N-Channel Enhancement Mode Mosfet (Matsuki)

ME2306 N-Channel MOSFET (VBsemi)

ME2306-G N-Channel Enhancement Mode Mosfet (Matsuki)

ME2306A N-Channel 30V (D-S) MOSFET (Matsuki)

ME2306A-G N-Channel 30V (D-S) MOSFET (Matsuki)

ME2306AS N-Channel 30V (D-S) MOSFET (Matsuki)

ME2306AS-G N-Channel 30V (D-S) MOSFET (Matsuki)

ME2306D N-Channel 30V (D-S) MOSFET (Matsuki)

ME2306D-G N-Channel 30V (D-S) MOSFET (Matsuki)

TAGS

ME2306S-G N-Channel 30V D-S MOSFET Matsuki

Image Gallery

ME2306S-G Datasheet Preview Page 2 ME2306S-G Datasheet Preview Page 3

ME2306S-G Distributor