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ME2306S-G, ME2306S N-Channel 30V (D-S) MOSFET

ME2306S-G Description

N-Channel 30V(D-S) MOSFET GENERAL .
The ME2306S is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

ME2306S-G Features

* FEATURES
* RDS(ON)≦37mΩ@ VGS =10V
* RDS(ON)≦49mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

ME2306S-G Applications

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter PIN CONFIGURATION (SOT-23) Top View
* The Ordering Information: ME2306S (Pb-free) ME2306S-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME2306S-G, ME2306S. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME2306S-G, ME2306S
Manufacturer
Matsuki
File Size
1.14 MB
Datasheet
ME2306S-Matsuki.pdf
Description
N-Channel 30V (D-S) MOSFET
Note
This datasheet PDF includes multiple part numbers: ME2306S-G, ME2306S.
Please refer to the document for exact specifications by model.

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N-Channel 30V D-S MOSFET Matsuki
Matsuki ME2306S-G-like datasheet