Description
N-Channel 30V(D-S) MOSFET GENERAL .
The ME2306S is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.
Features
* FEATURES
* RDS(ON)≦37mΩ@ VGS =10V
* RDS(ON)≦49mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
Applications
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
PIN CONFIGURATION
(SOT-23) Top View
* The Ordering Information: ME2306S (Pb-free) ME2306S-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃