ME2306S-G Datasheet, Mosfet, Matsuki

ME2306S-G Features

• Mosfet FEATURES
• RDS(ON)≦37mΩ@ VGS =10V
• RDS(ON)≦49mΩ@VGS=4.5V
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maxi

PDF File Details

Part number:

ME2306S-G

Manufacturer:

Matsuki

File Size:

1.14MB

Download:

📄 Datasheet

Description:

N-channel 30v (d-s) mosfet. The ME2306S is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

ME2306S-G Application

• Applications
• Power Management in Note book
• DC/DC Converter
• Load Switch
• LCD Display inverter PIN CONFIGURATI

TAGS

ME2306S-G

Matsuki

📁 Related Datasheet

ME2306S - N-Channel 30V (D-S) MOSFET (Matsuki)
N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION The ME2306S is the N-Channel logic enhancement mode power field effect transistors, using high cell dens.

ME2306 - N-Channel Enhancement Mode Mosfet (Matsuki)
N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME2306 is the N-Channel logic enhancement mode power field effect transistors, using high ce.

ME2306 - N-Channel MOSFET (VBsemi)
ME2306-VB ME2306-VB Datasheet N-Channel 30-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0.033 at VGS.

ME2306-G - N-Channel Enhancement Mode Mosfet (Matsuki)
N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME2306 is the N-Channel logic enhancement mode power field effect transistors, using high ce.

ME2306A - N-Channel 30V (D-S) MOSFET (Matsuki)
N-Channel 30V (D-S)MOSFET ME2306A/ME2306A-G GENERAL DESCRIPTION The ME2306A is the N-Channel logic enhancement mode power field effect transistors, .

ME2306A-G - N-Channel 30V (D-S) MOSFET (Matsuki)
N-Channel 30V (D-S)MOSFET ME2306A/ME2306A-G GENERAL DESCRIPTION The ME2306A is the N-Channel logic enhancement mode power field effect transistors, .

ME2306AS - N-Channel 30V (D-S) MOSFET (Matsuki)
N-Channel 30V (D-S)MOSFET ME2306AS/ME2306AS-G GENERAL DESCRIPTION The ME2306AS is the N-Channel logic enhancement mode power field effect transistor.

ME2306AS-G - N-Channel 30V (D-S) MOSFET (Matsuki)
N-Channel 30V (D-S)MOSFET ME2306AS/ME2306AS-G GENERAL DESCRIPTION The ME2306AS is the N-Channel logic enhancement mode power field effect transistor.

ME2306D - N-Channel 30V (D-S) MOSFET (Matsuki)
ME2306D/ME2306D-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION The ME2306D is the N-Channel logic enhancement mode power field effe.

ME2306D-G - N-Channel 30V (D-S) MOSFET (Matsuki)
ME2306D/ME2306D-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION The ME2306D is the N-Channel logic enhancement mode power field effe.