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ME2308D-G, ME2308D - N-Channel 30V (D-S) MOSFET

Matsuki

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ME2308D-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2308D-G, ME2308D. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	ME2308D-G, ME2308D
Manufacturer	Matsuki
File Size	784.81 KB
Description	N-Channel 30V (D-S) MOSFET
Datasheet	ME2308D-Matsuki.pdf
Note	This datasheet PDF includes multiple part numbers: ME2308D-G, ME2308D. Please refer to the document for exact specifications by model.

ME2308D-G Product details

Description

The ME2308D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)≦60mΩ@VGS=10V.
RDS(ON)≦70mΩ@VGS=4.5V.
RDS(ON)≦100mΩ@VGS=2.5V.
ESD Protection.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 20, 2018 |