ME2308S Datasheet (Matsuki) - N-Channel 60V (D-S) MOSFET

ME2308S, N-Channel 60V (D-S) MOSFET

The ME2308S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME2308S Features

* RDS(ON) ≦100mΩ@VGS=10V

* RDS(ON) ≦130mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* DC/DC Converter

* Load Switc