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ME2309-G Datasheet - Matsuki

ME2309-G P-Channel 60V (D-S) MOSFET

The ME2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

ME2309-G Features

* RDS(ON)≦215mΩ@VGS=-10V

* RDS(ON)≦260mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* DC/

ME2309-G Datasheet (931.08 KB)

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Datasheet Details

Part number:

ME2309-G

Manufacturer:

Matsuki

File Size:

931.08 KB

Description:

P-channel 60v (d-s) mosfet.

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ME2309-G P-Channel 60V D-S MOSFET Matsuki

ME2309-G Distributor