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ME2312 N-Channel 20V (D-S) MOSFET

ME2312 Description

N-Channel 20-V (D-S) MOSFET GENERAL .
The ME2312-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME2312 Features

* RDS(ON)≦33mΩ@VGS=4.5V
* RDS(ON)≦40mΩ@VGS=2.5V
* RDS(ON)≦51mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)

ME2312 Applications

* Power Management in Note book
* Portable Equipment
* Load Switch
* DSC Ordering Information: ME2312 /ME2312-G(Green product-Halogen free) Absolute M

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Datasheet Details

Part number
ME2312
Manufacturer
Matsuki
File Size
0.98 MB
Datasheet
ME2312-Matsuki.pdf
Description
N-Channel 20V (D-S) MOSFET

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N-Channel 20V D-S MOSFET Matsuki
Matsuki ME2312-like datasheet