ME2312 Datasheet (Matsuki) - N-Channel 20V (D-S) MOSFET

ME2312, N-Channel 20V (D-S) MOSFET

The ME2312-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such a

ME2312 Features

* RDS(ON)≦33mΩ@VGS=4.5V

* RDS(ON)≦40mΩ@VGS=2.5V

* RDS(ON)≦51mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Load Sw