ME2313 Datasheet (Matsuki) - P-Channel 20V (D-S) MOSFET

ME2313, P-Channel 20V (D-S) MOSFET

The ME2313 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME2313 Features

* RDS(ON)≦48mΩ@VGS=-10V

* RDS(ON)≦52mΩ@VGS=-4.5V

* RDS(ON)≦65mΩ@VGS=-2.5V

* RDS(ON)≦85mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* P