ME2312-G Datasheet - Matsuki

ME2312-G N-Channel 20V (D-S) MOSFET

The ME2312-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

ME2312-G Features

* RDS(ON)≦33mΩ@VGS=4.5V

* RDS(ON)≦40mΩ@VGS=2.5V

* RDS(ON)≦51mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Load Sw

ME2312-G Datasheet (0.98 MB)

ME2312-G Datasheet Preview — Preview of ME2312-G PDF

Datasheet Details

Part number:

ME2312-G

Manufacturer:

Matsuki

File Size:

0.98 MB

Description:

N-channel 20v (d-s) mosfet.

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ME2312-G N-Channel 20V D-S MOSFET Matsuki

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