Datasheet Details
Part number:
ME2312-G, ME2312
Manufacturer:
Matsuki
File Size:
0.98 MB
Description:
N-channel 20v (d-s) mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME2312-G, ME2312.
Please refer to the document for exact specifications by model.
ME2312-G, ME2312, N-Channel 20V (D-S) MOSFET
The ME2312-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such a
ME2312-G Features
* RDS(ON)≦33mΩ@VGS=4.5V
* RDS(ON)≦40mΩ@VGS=2.5V
* RDS(ON)≦51mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Load Sw
📁 Related Datasheet
📌 All Tags
