ME2312-G, ME2312 N-Channel 20V (D-S) MOSFET

Matsuki

Description

N-Channel 20-V (D-S) MOSFET GENERAL .
The ME2312-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

📥 Download Datasheet

ME2312-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2312-G, ME2312. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: ME2312-G, ME2312
Manufacturer: Matsuki
File Size: 0.98 MB
Datasheet: ME2312-Matsuki.pdf
Description: N-Channel 20V (D-S) MOSFET
Note: This datasheet PDF includes multiple part numbers: ME2312-G, ME2312.
Please refer to the document for exact specifications by model.

Features

* RDS(ON)≦33mΩ@VGS=4.5V
* RDS(ON)≦40mΩ@VGS=2.5V
* RDS(ON)≦51mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* Portable Equipment
* Load Switch
* DSC Ordering Information: ME2312 /ME2312-G(Green product-Halogen free) Absolute M

ME2312-G Distributors

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ME2312 N-Channel 20V D-S MOSFET Matsuki

Matsuki ME2312-G-like datasheet