ME2317D-G P-Channel 30V (D-S) MOSFET

Matsuki

Description

P-Channel 30V (D-S) MOSFET GENERAL .
The ME2317D-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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Datasheet Specifications

Part number: ME2317D-G
Manufacturer: Matsuki
File Size: 958.44 KB
Datasheet: ME2317D-G-Matsuki.pdf
Description: P-Channel 30V (D-S) MOSFET

Features

* RDS(ON) ≦45mΩ@VGS=-10V
* RDS(ON) ≦53mΩ@VGS=-4.5V
* RDS(ON) ≦80mΩ@VGS=-2.5V
* Typical ESD performance 3KV
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC The Ordering Information ME23

ME2317D-G Distributors

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ME2317D-G P-Channel 30V D-S MOSFET Matsuki

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