ME2317D-G Datasheet - Matsuki

ME2317D-G P-Channel 30V (D-S) MOSFET

The ME2317D-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such.

ME2317D-G Features

* RDS(ON) ≦45mΩ@VGS=-10V

* RDS(ON) ≦53mΩ@VGS=-4.5V

* RDS(ON) ≦80mΩ@VGS=-2.5V

* Typical ESD performance 3KV

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

ME2317D-G Datasheet (958.44 KB)

ME2317D-G Datasheet Preview — Preview of ME2317D-G PDF

Datasheet Details

Part number:

ME2317D-G

Manufacturer:

Matsuki

File Size:

958.44 KB

Description:

P-channel 30v (d-s) mosfet.

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ME2317D-G P-Channel 30V D-S MOSFET Matsuki

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