ME2317D-G Datasheet (Matsuki) - P-Channel 30V (D-S) MOSFET

ME2317D-G, P-Channel 30V (D-S) MOSFET

The ME2317D-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

ME2317D-G Features

* RDS(ON) ≦45mΩ@VGS=-10V

* RDS(ON) ≦53mΩ@VGS=-4.5V

* RDS(ON) ≦80mΩ@VGS=-2.5V

* Typical ESD performance 3KV

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book