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ME2318-G N-Channel 20V (D-S) MOSFET

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Description

N-Channel 20-V (D-S) MOSFET GENERAL .
The ME2318-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number
ME2318-G
Manufacturer
Matsuki
File Size
0.97 MB
Datasheet
ME2318-G-Matsuki.pdf
Description
N-Channel 20V (D-S) MOSFET

Features

* RDS(ON)≦34mΩ@VGS=4.5V
* RDS(ON)≦45mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter
* The Ordering Information: ME2318-G (Green

ME2318-G Distributors

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