Datasheet4U Logo Datasheet4U.com

ME2318-G N-Channel 20V (D-S) MOSFET

ME2318-G Description

N-Channel 20-V (D-S) MOSFET GENERAL .
The ME2318-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME2318-G Features

* RDS(ON)≦34mΩ@VGS=4.5V
* RDS(ON)≦45mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)

ME2318-G Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter
* The Ordering Information: ME2318-G (Green

📥 Download Datasheet

Preview of ME2318-G PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
ME2318-G
Manufacturer
Matsuki
File Size
0.97 MB
Datasheet
ME2318-G-Matsuki.pdf
Description
N-Channel 20V (D-S) MOSFET

📁 Related Datasheet

  • ME2301D - P-Channel MOSFET (VBsemi)
  • ME2303 - P-Channel MOSFET (VBsemi)
  • ME2306 - N-Channel MOSFET (VBsemi)
  • ME2323D - P-Channel MOSFET (VBsemi)
  • ME2324D - N-Channel MOSFET (VBsemi)
  • ME2325 - P-Channel 30V MOSFET (VBsemi)
  • ME2345A - P-Channel MOSFET (VBsemi)
  • ME2-CH2O-16x15 - Electrochemical Formaldehyde Sensor (Winsen)

📌 All Tags

N-Channel 20V D-S MOSFET Matsuki
Matsuki ME2318-G-like datasheet