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ME2318-G - N-Channel 20V (D-S) MOSFET

Matsuki

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Datasheet Details

Part number	ME2318-G
Manufacturer	Matsuki
File Size	0.97 MB
Description	N-Channel 20V (D-S) MOSFET
Datasheet	ME2318-G-Matsuki.pdf

ME2318-G Product details

Description

The ME2318-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)≦34mΩ@VGS=4.5V.
RDS(ON)≦45mΩ@VGS=2.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 20, 2018 |