ME2318S-G Datasheet - Matsuki

ME2318S-G N-Channel 40V (D-S) MOSFET

The ME2318S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such .

ME2318S-G Features

* RDS(ON) ≦40mΩ@VGS=10V

* RDS(ON) ≦65mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* DC/DC Converter

* Load Switch

ME2318S-G Datasheet (960.33 KB)

ME2318S-G Datasheet Preview — Preview of ME2318S-G PDF

Datasheet Details

Part number:

ME2318S-G

Manufacturer:

Matsuki

File Size:

960.33 KB

Description:

N-channel 40v (d-s) mosfet.

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ME2318S-G N-Channel 40V D-S MOSFET Matsuki

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