Datasheet Details
Part number:
ME2318S-G, ME2318S
Manufacturer:
Matsuki
File Size:
960.33 KB
Description:
N-channel 40v (d-s) mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME2318S-G, ME2318S.
Please refer to the document for exact specifications by model.
ME2318S-G, ME2318S, N-Channel 40V (D-S) MOSFET
The ME2318S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such
ME2318S-G Features
* RDS(ON) ≦40mΩ@VGS=10V
* RDS(ON) ≦65mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* Portable Equipment
* DC/DC Converter
* Load Switch
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